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AOD4185 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free*
Features
VDS (V) = -40V ID = -40A RDS(ON) < 15m RDS(ON) < 20m (VGS = -10V) (VGS = -10V) (VGS = -4.5V)
100% UIS Tested! 100% Rg Tested!
TO-252 D-PAK
Top View D
Bottom View
D
G S G S G S
Absolute Maximum Ratings TC=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25 C Power Dissipation B Power Dissipation A TC=100 C TA=25 C TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient Maximum Junction-to-Case D,F
C C
Maximum -40 20 -40 -31 -115 -42 88 62.5 31 2.5 1.6 -55 to 175
Units V V
VGS C TC=25 TC=100 C ID IDM IAR EAR PD PDSM TJ, TSTG
A
mJ
W
C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 15 41 2
Max 20 50 2.4
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185
Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-40V, VGS=0V TJ=55 C VDS=0V, VGS= 20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-15A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-20A IS=-1A,VGS=0V TJ=125 C -1.7 -115 12.5 19 16 50 -0.72 -1 -20 2550 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2.5 280 190 4 42 VGS=-10V, VDS=-20V, ID=-20A 18.6 7 8.6 9.4 VGS=-10V, VDS=-20V, RL=1, RGEN=3 IF=-20A, dI/dt=100A/s 20 55 30 38 47 49 nC nC ns ns ns ns ns nC 6 55 15 23 20 S V A pF pF pF nC m -1.9 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s
A: The value of RJA is measured with the device in a still air environment with T A =25 The power dissipation P DSM and current rating IDSM C. are based on TJ(MAX)=150 using steady state junction-to-ambient ther mal resistance. C, B. The power dissipation PD is based on TJ(MAX)=175 using junction-to-case thermal resistance, and is more useful in setting the upper C, dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the deviceTBD mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 The SOA curve provides a single pulse ratin g. C. TBD G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 -10V 100 80 -ID (A) 60 40 20 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics VGS=-3.5V 20 25C 0 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -4.0V -ID(A) 60 -6.0V -4.5V 80 100 VDS=-5V
40 125C
24 Normalized On-Resistance 22 20 RDS(ON) (m ) 18 16 14 12 10 0 10 20 30 40 50 60 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-10V VGS=-4.5V
2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 ID=-20A VGS=-10V ID=-20A
VGS=-4.5V ID=-15A
45 40 35 RDS(ON) (m ) 30 25 20 15 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C -IS (A)
150
10 1 0.1 0.01 25C 0.001 125C
mJ
25C 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=-20V ID=-20A Capacitance (pF) 3500 3000 Ciss 2500 2000 1500 1000 Crss 500 0 0 5 10 15 20 25 30 35 40 45 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 35 40 -VDS (Volts) Figure 8: Capacitance Characteristics Coss
8 -VGS (Volts)
6
4
2
1000
10000 TJ(Max)=175C TC=25C
100
-ID (Amps)
100s 1ms 10ms DC
10
Power (W)
RDS(ON) limited
10s 1000
100
1 TJ(Max)=175C TC=25C 0.1 1 10
0.1
100
10 0.00001
0.0001
0.001
0.01
0.1
1
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10 Z Jc Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=Tc+PDM.ZJC.RJC RJC=2.4C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
150
mJ
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 60 Power Dissipation (W) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Power De-rating (Note B) -Current rating ID (A) 40 50
30
20
10
0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Current De-rating (Note B)
10000
TJ(Max)=150C TA=25C
1000 Power (W)
100
10
1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4185
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & Waveforms
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds Isd Vgs Ig
L
VDC
+ Vdd -Vds
Alpha & Omega Semiconductor, Ltd.
+
-
+
-
+
Charge
ton td(on) tr td(off) toff tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
EAR= 1/2 LIAR
2
Vds BVDSS Vdd Id I AR
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
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